j5804 транзистор параметры цоколевка

Semiconductor Pinout Informations

Содержание

1. J5804 Datasheet – NPN 750V, 10A – Fairchild
2. J5804 Datasheet
3. NTD5804N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
4. Биполярный транзистор 2SC5804 — описание производителя. Основные параметры. Даташиты.
5. 2SC5804 Datasheet (PDF)

J5804 Datasheet – NPN 750V, 10A – Fairchild

Part Number : J5804, FJAF5804TU

Function : NPN 750V, 10A

Package : TO-3P Type

J5804 Datasheet

Reference Datasheet :

The FJA13009 is a 700 V 12 A NPN Silicon Epitaxial Planar Transistor.

The FJA13009 is designed for high speed switching applications which utilizes the industry standard TO-3P package offering flexibility in design and excellent Power Dissipation.

Features
• High-Speed Switching
• Suitable for Switching Regulator and Motor Control

NTD5804N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: NTD5804N

Тип транзистора: MOSFET

Максимальная рассеиваемая мощность (Pd): 71 W

Предельно допустимое напряжение сток-исток (Uds): 40 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 69 A

Общий заряд затвора (Qg): 45 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.0085 Ohm

Биполярный транзистор 2SC5804 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC5804

Тип материала: Si

Максимальная рассеиваемая мощность (Pc): 0.1 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.2 A

Предельная температура PN-перехода (Tj): 125 °C

Граничная частота коэффициента передачи тока (ft): 200 MHz

Ёмкость коллекторного перехода (Cc): 2.5 pf

Статический коэффициент передачи тока (hfe): 150

Корпус транзистора: T-USM

2SC5804 Datasheet (PDF)

1.1. 2sc5804.pdf Size:374K _isahaya

?SMALL-SIGNAL TRANSISTOR? 2SC5804 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit:mm 2SC5804 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency application. 0.8 0.2 0.2 Since it is a super-thin flat lead type package,a high-density mounting are possible. Complementary

4.1. 2sc5801.pdf Size:100K _update

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5801 50 pcs (Non reel) • 8 mm wide embossed taping 2SC5801-T3 10 kpcs/re

4.2. 2sc5808.pdf Size:30K _sanyo

Ordering number : ENN7079 2SC5808 NPN Triple Diffused Planar Silicon Transistor 2SC5808 Switching Power Supply Applications Features Package Dimensions � High breakdown voltage. unit : mm � High speed switching. 2045B � Wide ASO. [2SC5808] � Adoption of MBIT process. 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Base 2 : Collector 1 2 3 3 : Emitter 4 : Collector SANYO : T

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES � Low phase distortion, low voltage operation � Ideal for OSC applications � Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5800 50 pcs (Non reel) � 8 mm wide embos

4.5. 2sc5809.pdf Size:78K _panasonic

Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit: mm 4.6�0.2 For high breakdown voltage high-speed switching 9.9�0.3 2.9�0.2 ? 3.2�0.1 � Features � High-speed switching (Fall time tf is short) � High collector-base voltage (Emitter open) VCBO � Low collector-emitter saturation voltage VCE(sat) � TO-220D built-in: Excellent package with withstand voltage 5 kV 1.

4.6. 2sc5807.pdf Size:78K _isahaya

? ? Transistor DEVELOPING 2SC5807 For Low Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit :mm 2SC5807 is a silicon NPN epitaxial Transistor. 4.6 MAX It designed with high collector current and high collector dissipation. 1.5 1.6 FEATURE ?High collector current IC=5A ?Small collector to Emitter saturation voltage C E B ??VCE(sat)=0.25V TY

4.7. 2sc5802.pdf Size:146K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC5802 DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Wide area of safe operation APPLICATIONS ·For high voltage color display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute maximum ratings

4.8. 2sc5802.pdf Size:116K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ High voltage;high speed Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high voltage color display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC5802 Fig.1 simplified outline (TO-3P(H)IS) and symbol Abso

4.9. 2sc5803.pdf Size:256K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5803 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·W >

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